DMN10H099SFG-7

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000052999240

描述：Trans MOSFET N-CH 100V 4.2A Automotive 8-Pin PowerDI EP T/R

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current4.2 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time5.4 ns

Rds On - Drain-Source Resistance54 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time20 ns

Minimum Operating Temperature- 55 C

Package / CasePowerDI3333-8

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Qg - Gate Charge25.2 nC

PackagingCut Tape

PackagingMouseReel

PackagingReel

BrandDiodes Incorporated

RoHS Details

Factory Pack Quantity2000

ImageDiodes Incorporated DMN10H099SFG-7

ManufacturerDiodes Incorporated

SeriesDMN10

Product TypeMOSFET

DescriptionMOSFET 100V N-Ch Enh Mode 1127pF 25.2nC

Product CategoryMOSFET

SubcategoryMOSFETs

Channel ModeEnhancement

Fall Time7.3 ns

Unit Weight0.002540 oz

Pd - Power Dissipation980 mW

TradenamePowerDI

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time5.9 ns