参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current350 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.8 V
Rds On - Drain-Source Resistance1.46 mOhms
Transistor Type1 N-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
CAHTS8541290000
Height20.7 mm
Minimum Operating Temperature- 55 C
Width5.31 mm
Length15.87 mm
Maximum Operating Temperature+ 175 C
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge380 nC
SubcategoryMOSFETs
Product CategoryMOSFET
JPHTS8541290100
Package / CaseTO-247-3
Channel ModeEnhancement
Mounting StyleThrough Hole
CNHTS8541290000
PackagingTube
RoHS Details
TARIC8541290000
ImageInfineon / IR IRFP4368PBF
Unit Weight1.340411 oz
Factory Pack Quantity400
Pd - Power Dissipation520 W
Product TypeMOSFET
DescriptionMOSFET MOSFT 75V 350A 1.85mOhm 380nC Qg
ManufacturerInfineon
BrandInfineon / IR
Vds - Drain-Source Breakdown Voltage75 V
USHTS8541290095
Number of Channels1 Channel