参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityN-Channel
Id - Continuous Drain Current10 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance680 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
ImageSTMicroelectronics STP13N95K3
Package / CaseTO-220-3
PackagingTube
BrandSTMicroelectronics
SubcategoryMOSFETs
Product CategoryMOSFET
Mounting StyleThrough Hole
TARIC8541210000
DescriptionMOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A
ManufacturerSTMicroelectronics
Factory Pack Quantity1000
Qg - Gate Charge51 nC
RoHS Details
MXHTS85412101
SeriesSTP13N95K3
Product TypeMOSFET
USHTS8541290075
Channel ModeEnhancement
Unit Weight0.011640 oz
CNHTS8541210000
Pd - Power Dissipation190 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage950 V
Number of Channels1 Channel