参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current5.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance1.8 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Height4.6 mm
Length10.4 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge56 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time20 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
ImageSTMicroelectronics STB7NK80ZT4
Unit Weight0.139332 oz
SeriesSTB7NK80ZT4
Factory Pack Quantity1000
Pd - Power Dissipation125 W
BrandSTMicroelectronics
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 800 Volt 5.2A Zener SuperMESH
Vds - Drain-Source Breakdown Voltage800 V
USHTS8541290075
Number of Channels1 Channel
Rise Time12 ns
TypeMOSFET