参数项参数值
参数项参数值
Gate-Emitter Leakage Current400 nA
Collector- Emitter Voltage VCEO Max1.2 kV
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 40 C
Maximum Gate Emitter Voltage30 V
DescriptionIGBT Modules Output & SW Modules - DIAP IGBT
Collector-Emitter Saturation Voltage2.17 V
Package / CaseINT-A-PAK
Maximum Operating Temperature+ 150 C
Product CategoryIGBT Modules
Factory Pack Quantity12
Mounting StyleChassis Mount
Product TypeIGBT Modules
BrandVishay Semiconductors
ManufacturerVishay
MXHTS85412999
TARIC8541100000
SubcategoryIGBTs
USHTS8541290095
CNHTS8541290000
Continuous Collector Current at 25 C341 A
Pd - Power Dissipation1.042 kW