参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current409 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance1.3 mOhms
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85423102
Qg - Gate Charge460 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
PackagingTube
TARIC8542319000
ImageInfineon Technologies IRFB7430PBF
RoHS Details
Unit Weight0.211644 oz
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation375 W
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage40 V
TradenameStrongIRFET
USHTS8542310001
Number of Channels1 Channel