参数项参数值
参数项参数值
Forward Transconductance - Min100 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current200 mA
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time4.46 ns
Rds On - Drain-Source Resistance6 Ohms
Typical Turn-Off Delay Time21.9 ns
Minimum Operating Temperature- 55 C
Package / CaseX1-DFN1006-3
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge580 pC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP56D0UFB-7B
Factory Pack Quantity10000
SeriesDMP56
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET P-CH ENHANCEMENT MODE MOSFET
Channel ModeEnhancement
Fall Time15 ns
Unit Weight0.352740 oz
Pd - Power Dissipation425 mW
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel
Rise Time6.63 ns