参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current9.1 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage4 V
Rds On - Drain-Source Resistance210 mOhms
Transistor Type1 N-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
CAHTS8541290000
Width2.38 mm
Height6.22 mm
Length6.73 mm
MXHTS85412999
Maximum Operating Temperature+ 175 C
KRHTS8541299000
Qg - Gate Charge16.7 nC
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 100V 9.1A 210mOhm 16.7nC
JPHTS8541290100
Package / CaseTO-251-3
Channel ModeEnhancement
Mounting StyleThrough Hole
CNHTS8541290000
PackagingTube
ImageInfineon Technologies IRFU120NPBF
RoHS Details
TARIC8541290000
Unit Weight0.139332 oz
Product TypeMOSFET
Pd - Power Dissipation39 W
Factory Pack Quantity3000
BrandInfineon Technologies
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel