SH8M31GZETB

厂牌:ROHM
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000053021610
描述:
最新价格近期成交21单+
数量价格(含税)
1¥8.8793
50¥6.5057
100¥5.9765
300¥5.6179
500¥5.5495
1000¥5.4984
2000¥5.4727
4000¥5.4556
库存:3,120交期:3-4 weeks起订:1增量:1
数量:
X
8.8793(单价)
合计:
¥8.88
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationDual
DescriptionMOSFET 60V N&P-CHANNEL
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current4.5 A
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
ImageROHM Semiconductor SH8M31GZETB
Rds On - Drain-Source Resistance65 mOhms, 70 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time40 ns, 100 ns
Minimum Operating Temperature- 55 C
PackagingReel
Vgs - Gate-Source Voltage- 20 V, + 20 V
PackagingCut Tape
Package / CaseSOP-8
Typical Turn-On Delay Time12 ns, 17 ns
Product CategoryMOSFET
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2500
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
TARIC8541290000
Qg - Gate Charge7 nC, 40 nC
RoHS Details
CNHTS8541290000
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time13 ns, 40 ns
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time18 ns