CSD13202Q2

CSD13202Q2

厂牌：TI(德州仪器)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053031432

描述：Trans MOSFET N-CH 12V 22A 6-Pin WSON EP T/R

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min44 S

CNHTS8541290000

ConfigurationSingle

Width2 mm

Vgs th - Gate-Source Threshold Voltage580 mV

TechnologySi

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

Typical Turn-On Delay Time4.5 ns

Height0.75 mm

MXHTS85423901

Length2 mm

Rds On - Drain-Source Resistance9.3 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time11 ns

Package / CaseWSON-6

KRHTS8541299000

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

Mounting StyleSMD/SMT

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

Qg - Gate Charge5.1 nC

TARIC8542399000

ManufacturerTexas Instruments

Factory Pack Quantity3000

BrandTexas Instruments

RoHS Details

ImageTexas Instruments CSD13202Q2

SeriesCSD13202Q2

SubcategoryMOSFETs

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET N-CH Power MOSFET 12V 9.3mohm

Channel ModeEnhancement

USHTS8541290095

Fall Time13.6 ns

Unit Weight0.000208 oz

Pd - Power Dissipation2.7 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels1 Channel

Rise Time28 ns

Moisture Sensitivity Level1 (Unlimited)