参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 90 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
Width2.5 mm
Height1.5 mm
Length4.5 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
Pd - Power Dissipation1 W
SeriesBSR33
ImageDiodes Incorporated BSR33TA
BrandDiodes Incorporated
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8541290075
DescriptionBipolar Transistors - BJT PNP Medium Power
Moisture Sensitivity Level1 (Unlimited)