参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current800 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1 mm
Length2.2 mm
KRHTS8541219000
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 65 C
JPHTS8541210101
RoHS Details
ProductMOSFET Small Signal
CAHTS8541210000
Rds On - Drain-Source Resistance3 Ohms
Transistor Type2 N-Channel
Package / CaseSOT-363-6
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width1.35 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMN601DWK-7
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET Dual N-Channel
Product TypeMOSFET
MXHTS85412101
SeriesDMN60
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.000212 oz
CNHTS8541210000
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel