参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance64 mOhms
Transistor Type1 N-Channel
Width1.6 mm
Height1.1 mm
Length3 mm
MXHTS85412101
Qg - Gate Charge8.6 nC
KRHTS8541219000
Package / CaseSOT-26-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541210000
Minimum Operating Temperature- 55 C
CNHTS8541210000
ProductMOSFET Small Signal
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000529 oz
RoHS Details
Pd - Power Dissipation900 mW
SeriesDMN3051
BrandDiodes Incorporated
ImageDiodes Incorporated DMN3051LDM-7
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage30 V
ManufacturerDiodes Incorporated
Number of Channels1 Channel
Product CategoryMOSFET
USHTS8541210095
DescriptionMOSFET 30V 4A N-Channel