参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
MXHTS85412101
Height4.6 mm
Length10.4 mm
KRHTS8541299000
CNHTS8541210000
Package / CaseD2PAK-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
ImageSTMicroelectronics STGB19NC60KDT4
RoHS Details
SeriesSTGB19NC60KDT4
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Unit Weight0.079014 oz
BrandSTMicroelectronics
Product TypeIGBT Transistors
Product CategoryIGBT Transistors
DescriptionIGBT Transistors 20 A - 600 V - short circuit rugged IGBT
SubcategoryIGBTs
Continuous Collector Current Ic Max35 A
USHTS8541290095