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STW48N60M2
厂牌：ST(意法半导体)
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053035123
描述：STMICROELECTRONICS - STW48N60M2 - Power MOSFET, N Channel, 600 V, 42 A, 0.06 ohm, TO-247, Through Hole 库存分布: SG: 0 UK: 396; packSize: 1; minimumOrderQty: 1; rohs: YES
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage2 V
Transistor PolarityN-Channel
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time18.5 ns
Rds On - Drain-Source Resistance70 mOhms
Maximum Operating Temperature+ 150 C
Typical Turn-Off Delay Time13 ns
ImageSTMicroelectronics STW48N60M2
Package / CaseTO-247-3
PackagingTube
BrandSTMicroelectronics
SubcategoryMOSFETs
Product CategoryMOSFET
Mounting StyleThrough Hole
TARIC8541290000
DescriptionMOSFET PTD HIGH VOLTAGE
ManufacturerSTMicroelectronics
Factory Pack Quantity600
Qg - Gate Charge70 nC
RoHS Details
MXHTS85412999
SeriesSTW48N60M2
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Fall Time119 ns
Unit Weight1.340411 oz
CNHTS8541290000
Pd - Power Dissipation300 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time17 ns