参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max25 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width3.7 mm
Height1.65 mm
DC Collector/Base Gain hfe Min300 at 10 mA, 1 V, 300 at 1 A, 1 V, 200 at 7 A, 1 V, 40 at 20 A, 1 V
Length6.7 mm
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageDiodes Incorporated ZXTN2005GTA
RoHS Details
SeriesZXTN2005
SubcategoryTransistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.003951 oz
DescriptionBipolar Transistors - BJT 25V NPN Low Sat
ManufacturerDiodes Incorporated
Pd - Power Dissipation3 W