ZXTP25012EZTA

厂牌：DIODES(美台)

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000053035139

描述：Trans GP BJT PNP 12V 4.5A 19200mW 4-Pin(3+Tab) SOT-89 T/R

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商品参数

参数项参数值

DC Current Gain hFE Max1500 at - 10 mA, - 2 V

Gain Bandwidth Product fT310 MHz

Collector- Base Voltage VCBO- 20 V

Maximum DC Collector Current- 4.5 A

Collector- Emitter Voltage VCEO Max- 12 V

Continuous Collector Current- 4.5 A

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO- 7 V

Width2.6 mm

Collector-Emitter Saturation Voltage- 70 mV

Height1.6 mm

DC Collector/Base Gain hfe Min40 at -4.5 A, - 2 V

Length4.6 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Package / CaseSOT-89-3

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

PackagingReel

PackagingCut Tape

PackagingMouseReel

Minimum Operating Temperature- 55 C

CNHTS8541290000

Factory Pack Quantity1000

BrandDiodes Incorporated

SeriesZXTP25012

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT PNP 12V HIGH GAIN

ManufacturerDiodes Incorporated

TARIC8541290000

ImageDiodes Incorporated ZXTP25012EZTA

Product CategoryBipolar Transistors - BJT

RoHS Details

Unit Weight0.004603 oz

SubcategoryTransistors

Pd - Power Dissipation19200 mW

USHTS8541290095