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SI7852DP-T1-E3
厂牌：VISHAY(威世)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053036219
描述：MOSFET N-CH 80V 7.6A PPAK 8SOIC
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min25 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage2 V
Transistor PolarityN-Channel
Id - Continuous Drain Current12.5 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541210101
CAHTS8541210000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time17 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-SO-8
PackagingMouseReel
PackagingReel
PackagingCut Tape
DescriptionMOSFET 80V Vds 20V Vgs PowerPAK SO-8
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity3000
ManufacturerVishay
Product TypeMOSFET
BrandVishay Semiconductors
Qg - Gate Charge41 nC
RoHS Details
MXHTS85412101
SubcategoryMOSFETs
SeriesSI7
USHTS8541290095
Channel ModeEnhancement
Fall Time31 ns
Unit Weight0.017870 oz
CNHTS8541210000
Part # AliasesSI7852DP-E3
Pd - Power Dissipation5.2 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time11 ns