参数项参数值
参数项参数值
Forward Transconductance - Min11 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current5.7 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Height1.04 mm
Length3.3 mm
JPHTS8541290100
Typical Turn-On Delay Time12 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance65 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time22 ns
RoHS Details
Package / CasePowerPAK-1212-8
Factory Pack Quantity3000
ImageVishay Semiconductors SI7415DN-T1-GE3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width3.3 mm
Maximum Operating Temperature+ 150 C
BrandVishay Semiconductors
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
SubcategoryMOSFETs
DescriptionMOSFET -60V Vds 20V Vgs PowerPAK 1212-8
Product CategoryMOSFET
Qg - Gate Charge25 nC
MXHTS85412999
SeriesSI7
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.047069 oz
Fall Time16 ns
CNHTS8541290000
Part # AliasesSI7415DN-GE3
Pd - Power Dissipation3.8 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns