参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance380 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time41 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge17 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time9.5 ns
PackagingTube
TARIC8541290000
ImageSTMicroelectronics STF13N60M2
Unit Weight0.011640 oz
SeriesSTF13N60M2
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation25 W
BrandSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
Vds - Drain-Source Breakdown Voltage650 V
TradenameMDmesh
USHTS8541290095
Number of Channels1 Channel
Rise Time10 ns