参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time28 ns
Width5.15 mm
Rds On - Drain-Source Resistance270 mOhms
Transistor Type1 N-Channel
Height20.15 mm
Typical Turn-Off Delay Time70 ns
Length15.75 mm
MXHTS85412101
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-247-3
Qg - Gate Charge85 nC
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
ImageSTMicroelectronics STW20NK50Z
PackagingTube
Channel ModeEnhancement
SubcategoryMOSFETs
BrandSTMicroelectronics
Fall Time15 ns
ManufacturerSTMicroelectronics
SeriesSTW20NK50Z
Unit Weight1.340411 oz
Product CategoryMOSFET
Factory Pack Quantity600
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH
Pd - Power Dissipation190 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time20 ns