参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current3 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
MXHTS85412999
Typical Turn-On Delay Time5 ns
KRHTS8541299000
CNHTS8541290000
Rds On - Drain-Source Resistance120 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time30 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Qg - Gate Charge5.5 nC
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
BrandDiodes Incorporated
Product CategoryMOSFET
Factory Pack Quantity3000
TARIC8541290000
Product TypeMOSFET
SeriesDMG230
ManufacturerDiodes Incorporated
DescriptionMOSFET MOSFET BVDSS
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time20 ns
Unit Weight0.000282 oz
USHTS8541290095
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)