参数项参数值
参数项参数值
ConfigurationSingle
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max400 V
Continuous Collector Current1 A
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO9 V
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 65 C
Product CategoryBipolar Transistors - BJT
Length4.8 mm
Height4.5 mm
CAHTS8541290000
Collector-Emitter Saturation Voltage0.4 V
ImageSTMicroelectronics STBV42-AP
Maximum Operating Temperature+ 150 C
Package / CaseTO-92-3
Width3.8 mm
PackagingAmmo Pack
DescriptionBipolar Transistors - BJT NPN Hi-Volt Fast Sw
Mounting StyleThrough Hole
TARIC8541210000
Factory Pack Quantity2000
ManufacturerSTMicroelectronics
Product TypeBJTs - Bipolar Transistors
BrandSTMicroelectronics
RoHS Details
MXHTS85412101
SubcategoryTransistors
SeriesSTBV42
USHTS8541290095
Unit Weight0.016000 oz
CNHTS8541210000
Pd - Power Dissipation1 W