参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.6 ns
Rds On - Drain-Source Resistance46 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.1 ns
MXHTS85412101
Qg - Gate Charge22.4 nC
KRHTS8541219000
Package / CaseTSOT-26-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541210000
Minimum Operating Temperature- 55 C
Fall Time4 ns
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541210000
Unit Weight1.375685 oz
RoHS Details
SeriesDMN40
Pd - Power Dissipation1.8 W
BrandDiodes Incorporated
ImageDiodes Incorporated DMN4060SVT-7
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage45 V
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time8.1 ns
USHTS8541210095
DescriptionMOSFET MOSFET BVDSS: 41V-60 1V-60V TSOT26 T&R 3K
Moisture Sensitivity Level1 (Unlimited)