参数项参数值
参数项参数值
Gain Bandwidth Product fT165 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage150 mV
Width1.4 mm
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
BrandDiodes Incorporated
Unit Weight0.000282 oz
RoHS Details
SeriesFMMT61
Factory Pack Quantity10000
ImageDiodes Incorporated FMMT619TC
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation625 mW
ManufacturerDiodes Incorporated
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN SuperSOT
Moisture Sensitivity Level1 (Unlimited)