参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current250 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance2 MOhms
Width4.4 mm
MXHTS85423102
Height15.65 mm
Length10 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge225 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
TARIC8542319000
PackagingTube
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFB7437PBF
Product CategoryMOSFET
Unit Weight0.211644 oz
SubcategoryMOSFETs
Factory Pack Quantity1000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation230 W
USHTS8541290095
DescriptionMOSFET 40V 2.0mOhm 195A HEXFET 230W 150nC
Vds - Drain-Source Breakdown Voltage40 V
TradenameStrongIRFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)