参数项参数值
参数项参数值
Forward Transconductance - Min6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current5.9 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.9 ns
Width6.22 mm
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time33.9 ns
Length6.73 mm
MXHTS85423199
KRHTS8541299000
Qg - Gate Charge26.9 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
Factory Pack Quantity2500
BrandDiodes Incorporated
SeriesZXMP10A
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET P-Ch 100 Volt 5.2A
TARIC8542319000
ImageDiodes Incorporated ZXMP10A18KTC
Product CategoryMOSFET
Fall Time17.9 ns
RoHS Details
Unit Weight0.139332 oz
SubcategoryMOSFETs
Pd - Power Dissipation10.2 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time6.8 ns