参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current11 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time3 ns
Rds On - Drain-Source Resistance360 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Maximum Operating Temperature+ 150 C
ImageSTMicroelectronics STF13NM60N
Package / CaseTO-220-3
PackagingTube
Product CategoryMOSFET
DescriptionMOSFET N-CH 600V 11A MDMESH Power MDmesh
Mounting StyleThrough Hole
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge27 nC
BrandSTMicroelectronics
RoHS Details
SubcategoryMOSFETs
SeriesSTF13NM60N
Fall Time10 ns
Unit Weight0.011640 oz
Pd - Power Dissipation25 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time8 ns