参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.25 mm
Collector-Emitter Saturation Voltage1 V
Height0.8 mm
DC Collector/Base Gain hfe Min35
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor UMT2222AT106
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
SeriesUMT2222A
Product CategoryBipolar Transistors - BJT
Unit Weight0.000176 oz
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 40V 0.6A
Part # AliasesUMT2222A
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)