SQJ912DEP-T1_GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053038910

描述：Vishay MOSFET SQJ912DEP-T1_GE3

商品参数

参数项参数值

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current30 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time10 ns

Rds On - Drain-Source Resistance7.3 mOhms

Transistor Type1 N - Channel

Typical Turn-Off Delay Time25 ns

Qg - Gate Charge36 nC

Package / CaseSO-8

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time21 ns

PackagingReel

PackagingCut Tape

PackagingMouseReel

TARIC8541290000

ImageVishay / Siliconix SQJ912DEP-T1_GE3

BrandVishay / Siliconix

Factory Pack Quantity3000

Pd - Power Dissipation27 W

Product TypeMOSFET

ManufacturerVishay

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET Automotive Dual N-Channel 40 V (D-S) 175C MOSFET PowerPAK SO-8L, 7.3 mO @ 10V mO @ 7.5V 10.2 mO @ 4.5V

Vds - Drain-Source Breakdown Voltage40 V

USHTS8541290095

TradenameTrenchFET

Number of Channels1 Channel

Rise Time4 ns