参数项参数值
参数项参数值
CNHTS8541290000
ConfigurationSingle
Width3 mm
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height0.9 mm
MXHTS85412999
Length3.15 mm
Rds On - Drain-Source Resistance7.3 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time13 ns
Package / CaseVSONP-8
KRHTS8541299000
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Qg - Gate Charge17.1 nC
TARIC8541290000
ManufacturerTexas Instruments
Factory Pack Quantity2500
BrandTexas Instruments
RoHS Details
ImageTexas Instruments CSD17578Q3A
SeriesCSD17578Q3A
SubcategoryMOSFETs
Development KitTPS25740EVM-741, TPS25740AEVM-741, TPS25740BEVM-741
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET CSD17578Q3A 30 V 8-VSONP
Channel ModeEnhancement
USHTS8541290095
Fall Time1 ns
Unit Weight0.000967 oz
Pd - Power Dissipation37 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time6 ns