参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current510 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
MXHTS85412101
Rds On - Drain-Source Resistance2 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time11 ns
Width1.6 mm
Height1.1 mm
Length2.9 mm
KRHTS8541219000
Qg - Gate Charge1 nC
Package / CaseSSOT-6
CNHTS8541290000
ProductMOSFET Small Signal
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time6 ns
ImageON Semiconductor / Fairchild NDC7002N
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesNDC7002N
Unit Weight0.001058 oz
ManufacturerON Semiconductor
BrandON Semiconductor / Fairchild
DescriptionMOSFET SO-6 N-CH ENHANCE
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation960 mW
Part # AliasesNDC7002N_NL
SubcategoryMOSFETs
USHTS8541210095
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels2 Channel
Rise Time6 ns
Moisture Sensitivity Level1 (Unlimited)