SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053050377

描述：E-Series N-Channel 600 V 0.18 Ω 86 nC Surface Mount Power Mosfet - D2PAK

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4 V

TechnologySi

Id - Continuous Drain Current21 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time18 ns

Rds On - Drain-Source Resistance180 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time66 ns

MXHTS85411001

Qg - Gate Charge57 nC

KRHTS8541299000

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541100901

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541100090

Channel ModeEnhancement

CNHTS8541210000

Fall Time35 ns

PackagingReel

PackagingMouseReel

PackagingCut Tape

TARIC8541290000

Unit Weight0.077603 oz

ImageVishay / Siliconix SIHB22N60ET1-GE3

SeriesE

BrandVishay / Siliconix

Pd - Power Dissipation227 W

Factory Pack Quantity800

Product TypeMOSFET

ManufacturerVishay

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET 600V Vds E Series D2PAK TO-263

Vds - Drain-Source Breakdown Voltage650 V

USHTS8541290095

Number of Channels1 Channel

Rise Time27 ns