参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min0.008 S
Vgs th - Gate-Source Threshold Voltage- 2.7 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current0.021 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time6.1 ns
ImageInfineon Technologies BSS126IXTSA1
Product CategoryMOSFET
Rds On - Drain-Source Resistance500 Ohms
Transistor Type1 N - Channel
Typical Turn-Off Delay Time14 ns
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
DescriptionMOSFET
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
TARIC8541290000
BrandInfineon Technologies
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
USHTS8541290095
Channel ModeDepletion
Fall Time115 ns
Part # AliasesBSS126I SP005425148
Pd - Power Dissipation500 mW (1/2 W)
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time9.7 ns