参数项参数值
参数项参数值
Forward Transconductance - Min60 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7.7 ns
Rds On - Drain-Source Resistance2.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
MXHTS85412999
Qg - Gate Charge30 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time5.4 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.004180 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation83 W
ImageInfineon Technologies BSC027N06LS5ATMA1
Part # AliasesBSC027N06LS5 SP001385616
SeriesBSC027N
Factory Pack Quantity5000
BrandInfineon Technologies
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
Product TypeMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
TradenameOptiMOS 5
Rise Time4.8 ns
DescriptionMOSFET DIFFERENTIATED MOSFETS
USHTS8541290095