参数项参数值
参数项参数值
DC Current Gain hFE Max200
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 160 V
Collector- Emitter Voltage VCEO Max- 150 V
Continuous Collector Current- 500 mA
ConfigurationSingle
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min40
QualificationAEC-Q101
JPHTS8541210101
CAHTS8541210000
MXHTS85412101
KRHTS8541219000
USHTS8541210095
Mounting StyleSMD/SMT
Product TypeBJTs - Bipolar Transistors
Package / CaseSC-70-3
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
SubcategoryTransistors
TARIC8541210000
ManufacturerON Semiconductor
RoHS Details
ImageON Semiconductor NSVMMBT5401WT1G
PackagingMouseReel
PackagingReel
PackagingCut Tape
SeriesMMBT5401W
BrandON Semiconductor
Unit Weight0.000212 oz
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
DescriptionBipolar Transistors - BJT PNP HIGH VOLTAGE TRA
Pd - Power Dissipation400 mW
Moisture Sensitivity Level1 (Unlimited)