RJP020N06T100

RJP020N06T100

厂牌：ROHM

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000053115218

描述：MOSFET N-CH 60V 2A SOT-89

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Id - Continuous Drain Current2 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage800 mV

TechnologySi

Rds On - Drain-Source Resistance240 mOhms

Height1.5 mm

Transistor Type1 N-Channel MOSFET

Typical Turn-Off Delay Time40 ns

Vgs - Gate-Source Voltage- 12 V, + 12 V

JPHTS8541290100

Typical Turn-On Delay Time8 ns

Length4.5 mm

CAHTS8541290000

MXHTS85412999

Width2.5 mm

KRHTS8541299000

USHTS8541290095

Mounting StyleSMD/SMT

Product TypeMOSFET

Package / CaseSOT-89-3

Qg - Gate Charge5 nC

Maximum Operating Temperature+ 150 C

CNHTS8541290000

Channel ModeEnhancement

SubcategoryMOSFETs

TARIC8541290000

ManufacturerROHM Semiconductor

RoHS Details

ImageROHM Semiconductor RJP020N06T100

PackagingCut Tape

PackagingMouseReel

PackagingReel

SeriesRJP020N06

BrandROHM Semiconductor

Fall Time20 ns

Unit Weight0.004603 oz

Product CategoryMOSFET

Factory Pack Quantity1000

DescriptionMOSFET N-CH 60V 2.5A

Part # AliasesRJP020N06

Pd - Power Dissipation2 W

TypeMOSFET

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time18 ns

Moisture Sensitivity Level1 (Unlimited)