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EM6M2T2R
厂牌：Rohm Semiconductor
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053116211
描述：Trans MOSFET N/P-CH Si 20V 0.2A 6-Pin EMT T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min200 ms
TechnologySi
ConfigurationDual
Id - Continuous Drain Current200 mA
Vgs th - Gate-Source Threshold Voltage1 V, -1 V
Transistor PolarityN-Channel, P-Channel
Rds On - Drain-Source Resistance1 Ohms, 1.2 Ohms
Typical Turn-Off Delay Time15 ns, 17 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V, - 10 V, + 10 V
MXHTS85412999
Typical Turn-On Delay Time5 ns, 6 ns
KRHTS8541299000
JPHTS8541210101
CNHTS8541210000
CAHTS8541210000
Product TypeMOSFET
Package / CaseSOT-563-6
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time10 ns, 17 ns
TARIC8541290000
BrandROHM Semiconductor
Unit Weight0.000106 oz
Factory Pack Quantity8000
RoHS Details
SeriesEM6M2
ImageROHM Semiconductor EM6M2T2R
Pd - Power Dissipation150 mW
Product CategoryMOSFET
Part # AliasesEM6M2
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
DescriptionMOSFET 1.2V Drive Nch+Pch MOSFET
Number of Channels2 Channel
Rise Time10 ns, 4 ns
Moisture Sensitivity Level1 (Unlimited)