参数项参数值
参数项参数值
Gain Bandwidth Product fT85 MHz
Collector- Base Voltage VCBO- 400 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max- 400 V
ConfigurationSingle
Continuous Collector Current- 0.5 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO- 6 V
Height1.65 mm
Width3.7 mm
Collector-Emitter Saturation Voltage- 170 mV
Mounting StyleSMD/SMT
MXHTS85412999
Length6.7 mm
KRHTS8541299000
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
RoHS Details
ImageDiodes Incorporated FZT958TA
TARIC8541290000
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
PackagingCut Tape
PackagingMouseReel
PackagingReel
ManufacturerDiodes Incorporated
SubcategoryTransistors
SeriesFZT958
USHTS8541290095
Unit Weight0.003951 oz
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP HighCt HighV
Pd - Power Dissipation3 W