参数项参数值
参数项参数值
Maximum DC Collector Current16 A
Collector- Emitter Voltage VCEO Max80 V
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage1 V
Emitter- Base Voltage VEBO5 V
MXHTS85412999
QualificationAEC-Q101
Width6.2 mm
Mounting StyleSMD/SMT
Height2.4 mm
Length6.6 mm
SeriesMJD44H11T4-A
KRHTS8541299000
Package / CaseTO-252-3
CAHTS8541290000
CNHTS8541290000
Maximum Operating Temperature+ 150 C
JPHTS8541290100
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.139332 oz
TARIC8541290000
RoHS Details
Factory Pack Quantity2500
ImageSTMicroelectronics MJD44H11T4-A
DescriptionBipolar Transistors - BJT PTD IGBT & IPM
USHTS8541290095
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Moisture Sensitivity Level1 (Unlimited)