参数项参数值
参数项参数值
Gain Bandwidth Product fT90 MHz
Maximum DC Collector Current16 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current8 A
ConfigurationSingle
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min60
QualificationAEC-Q101
MXHTS85412999
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor NJVMJD45H11T4G
TARIC8541290000
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
CAHTS8541290000
Package / CaseDPAK-3
CNHTS8541290000
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
RoHS Details
Product TypeBJTs - Bipolar Transistors
Unit Weight0.009185 oz
SeriesMJD45H11
SubcategoryTransistors
Factory Pack Quantity2500
DescriptionBipolar Transistors - BJT BIP DPAK PNP 8A 80V TR
ManufacturerON Semiconductor
USHTS8541290095
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)