参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current500 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.7 V
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min250
MXHTS85411001
PackagingReel
PackagingCut Tape
ImageTaiwan Semiconductor BC817-40 RFG
KRHTS8541109000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
CNHTS8541100000
TARIC8541100000
RoHS Details
SeriesBC817-xx
Pd - Power Dissipation300 mW
DescriptionBipolar Transistors - BJT SOT-23, 50V, 0.5A, NPN Bipolar Transistor
BrandTaiwan Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerTaiwan Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541100050
Moisture Sensitivity Level1 (Unlimited)