参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max45 V
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage700 mV
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min170 at 300 mA, 1 V
Width1.4 mm
Height1 mm
Length3.05 mm
JPHTS8541210101
MXHTS85412101
KRHTS8541219000
BrandDiodes Incorporated
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.000282 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation310 mW
DescriptionBipolar Transistors - BJT NPN BIPOLAR
ImageDiodes Incorporated BC817-40-7-F
SeriesBC817
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)