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IRF630NSTRLPBF
厂牌：Infineon
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000053165844
描述：MOSFET N-CH 200V 9.3A D2PAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min4.9 S
ConfigurationSingle
Id - Continuous Drain Current9.3 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Height2.3 mm
Rds On - Drain-Source Resistance300 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Width6.22 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time7.9 ns
Package / CaseTO-263-3
Length6.5 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
KRHTS8541299000
CAHTS8541290000
RoHS Details
JPHTS8541290100
Qg - Gate Charge23.3 nC
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
ImageInfineon / IR IRF630NSTRLPBF
SubcategoryMOSFETs
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Unit Weight0.139332 oz
BrandInfineon / IR
Factory Pack Quantity800
Fall Time15 ns
ManufacturerInfineon
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation82 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)