参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current9 A
Transistor PolarityN-Channel
TechnologySi
Rds On - Drain-Source Resistance400 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
CNHTS8541290000
BrandVishay Semiconductors
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge43 nC
Package / CaseTO-263-3
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
TARIC8541290000
Product CategoryMOSFET
Channel ModeEnhancement
Factory Pack Quantity800
RoHS Details
SeriesIRF
ManufacturerVishay
Product TypeMOSFET
DescriptionMOSFET N-Chan 200V 9.0 Amp
ImageVishay Semiconductors IRF630STRRPBF
Unit Weight0.050717 oz
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation74 W
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)