STB38N65M5

厂牌：ST

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000053169018

描述：N-Channel 650 V 27 A 0.095 Ohm 190 W Surface Mount Power Mosfet - D2PAK-3

商品参数

参数项参数值

ConfigurationSingle

Transistor PolarityN-Channel

Id - Continuous Drain Current30 A

TechnologySi

Vgs th - Gate-Source Threshold Voltage3 V

Minimum Operating Temperature- 55 C

Rds On - Drain-Source Resistance95 mOhms

Maximum Operating Temperature+ 150 C

KRHTS8541299000

Vgs - Gate-Source Voltage- 25 V, + 25 V

JPHTS8541290100

DescriptionMOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5

ManufacturerSTMicroelectronics

ImageSTMicroelectronics STB38N65M5

CAHTS8541290000

MXHTS85412999

RoHS Details

Package / CaseD2PAK-3

BrandSTMicroelectronics

SubcategoryMOSFETs

USHTS8541290095

TARIC8541210000

Mounting StyleSMD/SMT

PackagingCut Tape

PackagingReel

PackagingMouseReel

Product CategoryMOSFET

Factory Pack Quantity1000

SeriesMdmesh M5

TradenameMDmesh

Product TypeMOSFET

Channel ModeEnhancement

Fall Time9 ns

Unit Weight0.139332 oz

CNHTS8541210000

Pd - Power Dissipation190 W

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time9 ns

Moisture Sensitivity Level1 (Unlimited)