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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.15 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
MXHTS85412999
DC Collector/Base Gain hfe Min120
Width0.8 mm
Height0.5 mm
Length1.2 mm
KRHTS8541299000
RoHS Details
CNHTS8541210000
DescriptionBipolar Transistors - BJT NPN 50V 0.15A
Package / CaseVMT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
JPHTS8541290100
Series2SC5658
BrandROHM Semiconductor
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SC5658T2LQ
SubcategoryTransistors
Unit Weight0.000282 oz
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity8000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)