参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz, 180 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
TechnologySi
ConfigurationDual
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 6 V, 7 V
Width1.25 mm
MXHTS85412999
DC Collector/Base Gain hfe Min120
Height0.9 mm
Length2 mm
KRHTS8541299000
CNHTS8541290000
USHTS8541290095
CAHTS8541290000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
RoHS Details
PackagingReel
PackagingCut Tape
PackagingMouseReel
SeriesUMZ2NT
TARIC8541290000
BrandROHM Semiconductor
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation150 mW
Part # AliasesUMZ2N
DescriptionBipolar Transistors - BJT NPN/PNP 50V 150MA SOT-363
Moisture Sensitivity Level1 (Unlimited)