参数项参数值
参数项参数值
DC Current Gain hFE Max400 at 1 A, 1 V
Gain Bandwidth Product fT160 MHz
Collector- Base Voltage VCBO40 V
ConfigurationSingle
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max40 V
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.5 V
KRHTS8541299000
DC Collector/Base Gain hfe Min200 at 1 A, 1 V
QualificationAEC-Q101
Package / CaseSOT-223-4
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SeriesNJT4030P
MXHTS85412999
TARIC8541290000
Mounting StyleSMD/SMT
BrandON Semiconductor
CNHTS8541290000
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageON Semiconductor NJV4030PT1G
DescriptionBipolar Transistors - BJT PNP SOT223 BIP PWR TRAN
Factory Pack Quantity1000
SubcategoryTransistors
RoHS Details
Unit Weight0.003951 oz
USHTS8541290095
Pd - Power Dissipation2 W