参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current5.7 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage4 V
Rds On - Drain-Source Resistance28 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width3.95 mm
Height0.7 mm
Typical Turn-On Delay Time9.2 ns
Length4.85 mm
RoHS Details
Qg - Gate Charge14 nC
DescriptionMOSFET 100V 1 N-CH HEXFET DIRECTFET SJ
Package / CaseDirectFET-SJ
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 40 C
Channel ModeEnhancement
Fall Time5.1 ns
BrandInfineon / IR
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF6645TRPBF
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity4800
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation42 W
Vds - Drain-Source Breakdown Voltage100 V
TradenameDirectFET
Number of Channels1 Channel
Rise Time5 ns